N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique
N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique
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Publisher
Switzerland: MDPI AG
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Language
English
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Publisher
Switzerland: MDPI AG
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N-doped graphene with low intrinsic defect densities was obtained by combining a solid source doping technique and chemical vapor deposition (CVD). The solid source for N-doping was embedded into the copper substrate by NH₃ plasma immersion. During the treatment, NH₃ plasma radicals not only flattened the Cu substrate such that the root-mean-square...
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Full title
N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique
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TN_cdi_doaj_primary_oai_doaj_org_article_84841fd956a649a4a5cfc0c6ef3c2e77
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_84841fd956a649a4a5cfc0c6ef3c2e77
Other Identifiers
ISSN
2079-4991
E-ISSN
2079-4991
DOI
10.3390/nano7100302
