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A foundation for complex oxide electronics -low temperature perovskite epitaxy

A foundation for complex oxide electronics -low temperature perovskite epitaxy

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_858df9fbe6db442192e21b1321a27b4e

A foundation for complex oxide electronics -low temperature perovskite epitaxy

About this item

Full title

A foundation for complex oxide electronics -low temperature perovskite epitaxy

Publisher

London: Nature Publishing Group UK

Journal title

Nature communications, 2020-06, Vol.11 (1), p.2872-2872, Article 2872

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

As traditional silicon technology is moving fast towards its fundamental limits, all-oxide electronics is emerging as a challenger offering principally different electronic behavior and switching mechanisms. This technology can be utilized to fabricate devices with enhanced and exotic functionality. One of the challenges for integration of complex...

Alternative Titles

Full title

A foundation for complex oxide electronics -low temperature perovskite epitaxy

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_858df9fbe6db442192e21b1321a27b4e

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_858df9fbe6db442192e21b1321a27b4e

Other Identifiers

ISSN

2041-1723

E-ISSN

2041-1723

DOI

10.1038/s41467-020-16654-2

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