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Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_891732e379a642dbbbd020a192a52c2a

Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid

About this item

Full title

Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Publisher

Basel: MDPI AG

Journal title

Crystals (Basel), 2022-12, Vol.12 (12), p.1715

Language

English

Formats

Publication information

Publisher

Basel: MDPI AG

More information

Scope and Contents

Contents

The effect of an insulation lid on the growth of 4-inch β-Ga2O3 single crystals by the Czochralski method is analyzed by numerical simulation. The insulation lid mainly hinders upward radiant heat transfer from the melt and crucible and increases the axial temperature gradient in the crystal. Such benefits make the melt/crystal interface convex, wh...

Alternative Titles

Full title

Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_891732e379a642dbbbd020a192a52c2a

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_891732e379a642dbbbd020a192a52c2a

Other Identifiers

ISSN

2073-4352

E-ISSN

2073-4352

DOI

10.3390/cryst12121715

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