Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio
Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio
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Basel: MDPI AG
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Language
English
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Publisher
Basel: MDPI AG
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Highly conductive silicon-doped AlGaN and ohmic contacts are needed for deep-UV LEDs and ultrawide bandgap electronics. We demonstrate improved n-Al0.65Ga0.35N films grown by metal–organic chemical vapor deposition (MOCVD) on sapphire substrates using a low V/III ratio (V/III = 10). A reduced V/III ratio improves repeatability and uniformity by all...
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Full title
Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio
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TN_cdi_doaj_primary_oai_doaj_org_article_896a3e305da7421dbecda24f47d5050e
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_896a3e305da7421dbecda24f47d5050e
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ISSN
2073-4352
E-ISSN
2073-4352
DOI
10.3390/cryst11081006
