Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot...
Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene
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Full title
Author / Creator
Zhang, Ting , Zhang, Haijing , Pan, Jie and Sheng, Ping
Publisher
Bristol: IOP Publishing
Journal title
Language
English
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Publication information
Publisher
Bristol: IOP Publishing
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Scope and Contents
Contents
We study the transport behavior of anti-dot graphene both theoretically and experimentally, where the term ‘anti-dot’ denotes the graphene layer to be nanostructured with a periodic array of holes. It has been shown that the electronic band structure of the anti-dot graphene can be described by a 4 by 4 effective Hamiltonian (Pan J
et al
2017...
Alternative Titles
Full title
Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene
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TN_cdi_doaj_primary_oai_doaj_org_article_9236cd8322f84d39becdd5446b2766ad
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9236cd8322f84d39becdd5446b2766ad
Other Identifiers
ISSN
1367-2630
E-ISSN
1367-2630
DOI
10.1088/1367-2630/ac9f2a
