Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Device...
Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices
About this item
Full title
Author / Creator
Publisher
Basel: MDPI AG
Journal title
Language
English
Formats
Publication information
Publisher
Basel: MDPI AG
Subjects
More information
Scope and Contents
Contents
We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a set level. This method provides the capability to control a change in the charge state of the gate dielect...
Alternative Titles
Full title
Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_9933ac09d686452c8445d01456be79d2
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9933ac09d686452c8445d01456be79d2
Other Identifiers
ISSN
2227-7080
E-ISSN
2227-7080
DOI
10.3390/technologies12070102
