Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technolo...
Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology
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Publisher
Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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In this work, we propose a vertical gate-all-around device architecture (GAA-FinFET) with the aim of simultaneously improving device performance as well as addressing the short channel effect (SCE). The GAA-FinFET was built using the technology computer-aided design (TCAD) simulation tool, and then, its electrical characteristics were quantitativel...
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Full title
Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology
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TN_cdi_doaj_primary_oai_doaj_org_article_9a175a09c23849de938dd7cf4fd04095
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9a175a09c23849de938dd7cf4fd04095
Other Identifiers
ISSN
2072-666X
E-ISSN
2072-666X
DOI
10.3390/mi13091551
