Log in to save to my catalogue

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical P...

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical P...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9e49639b931145b5af76fe731942150e

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

About this item

Full title

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

Publisher

Singapore: Springer Singapore

Journal title

Nano-Micro Letters, 2020-08, Vol.12 (1), p.160-160, Article 160

Language

English

Formats

Publication information

Publisher

Singapore: Springer Singapore

More information

Scope and Contents

Contents

Highlights
Exquisite strain engineering in 1D chiral semiconductor.
Facile nanoimprinting induced tensile strain in Te nanowire.
Intriguing and tunable optical properties of 1D Te nanowire by strain engineering.
The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials a...

Alternative Titles

Full title

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_9e49639b931145b5af76fe731942150e

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9e49639b931145b5af76fe731942150e

Other Identifiers

ISSN

2311-6706

E-ISSN

2150-5551

DOI

10.1007/s40820-020-00493-3

How to access this item