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Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using...

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9eeffedb6c7344a294d2d0f3968df5d4

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO2 Diffusion and Reaction Barriers

About this item

Full title

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO2 Diffusion and Reaction Barriers

Publisher

Weinheim: John Wiley & Sons, Inc

Journal title

Advanced materials interfaces, 2024-07, Vol.11 (20), p.n/a

Language

English

Formats

Publication information

Publisher

Weinheim: John Wiley & Sons, Inc

More information

Scope and Contents

Contents

Interactions at high temperatures between thin films and the Si substrate limit materials discovery using combinatorial processing platforms (CPPs). To overcome this, a diffusion and reaction barrier, SiO2, by thermal oxidation of Si tips is developed. The application of this diffusion barrier in CPPs for atomic‐scale investigations of new material...

Alternative Titles

Full title

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO2 Diffusion and Reaction Barriers

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_9eeffedb6c7344a294d2d0f3968df5d4

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9eeffedb6c7344a294d2d0f3968df5d4

Other Identifiers

ISSN

2196-7350

E-ISSN

2196-7350

DOI

10.1002/admi.202400138

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