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Improved Conductivity of Low‐Temperature‐Synthesized Graphene/Cu for CMOS Backend‐of‐Line Interconne...

Improved Conductivity of Low‐Temperature‐Synthesized Graphene/Cu for CMOS Backend‐of‐Line Interconne...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9f0d5f98662b4b4ab298972cbbf1f2bb

Improved Conductivity of Low‐Temperature‐Synthesized Graphene/Cu for CMOS Backend‐of‐Line Interconnect Applications

About this item

Full title

Improved Conductivity of Low‐Temperature‐Synthesized Graphene/Cu for CMOS Backend‐of‐Line Interconnect Applications

Publisher

Weinheim: John Wiley & Sons, Inc

Journal title

Advanced materials interfaces, 2025-03, Vol.12 (5), p.n/a

Language

English

Formats

Publication information

Publisher

Weinheim: John Wiley & Sons, Inc

More information

Scope and Contents

Contents

This study proposes a synthesis strategy of high‐quality graphene films on the copper foil at a temperature of 400 °C throughout the graphene growth process without employing high‐temperature annealing. Through continuous CO2 laser pretreatment of the copper foil, the surface smoothness improves, and the removal of copper particles and copper oxide...

Alternative Titles

Full title

Improved Conductivity of Low‐Temperature‐Synthesized Graphene/Cu for CMOS Backend‐of‐Line Interconnect Applications

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_9f0d5f98662b4b4ab298972cbbf1f2bb

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_9f0d5f98662b4b4ab298972cbbf1f2bb

Other Identifiers

ISSN

2196-7350

E-ISSN

2196-7350

DOI

10.1002/admi.202400622

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