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BAlGaN light‐emitting diode emitting at 350 nm

BAlGaN light‐emitting diode emitting at 350 nm

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_a4650c7ae5654e4abb4e8b01c1e9e025

BAlGaN light‐emitting diode emitting at 350 nm

About this item

Full title

BAlGaN light‐emitting diode emitting at 350 nm

Publisher

Stevenage: John Wiley & Sons, Inc

Journal title

Electronics letters, 2023-10, Vol.59 (19), p.n/a

Language

English

Formats

Publication information

Publisher

Stevenage: John Wiley & Sons, Inc

More information

Scope and Contents

Contents

In this work, the authors report the first demonstration of an ultraviolet light‐emitting diode (LED) with boron‐containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first QW with an increase in subsequent QWs and lingering decay into the p ‐region, likely attributable to boron's surfa...

Alternative Titles

Full title

BAlGaN light‐emitting diode emitting at 350 nm

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_a4650c7ae5654e4abb4e8b01c1e9e025

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_a4650c7ae5654e4abb4e8b01c1e9e025

Other Identifiers

ISSN

0013-5194

E-ISSN

1350-911X

DOI

10.1049/ell2.12976

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