Doherty Power Amplifier for LTE-Advanced Systems
Doherty Power Amplifier for LTE-Advanced Systems
About this item
Full title
Author / Creator
Publisher
Basel: MDPI AG
Journal title
Language
English
Formats
Publication information
Publisher
Basel: MDPI AG
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Scope and Contents
Contents
The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in the frequency band of 3.3–3.5 GHz. Rogers RO4350B...
Alternative Titles
Full title
Doherty Power Amplifier for LTE-Advanced Systems
Authors, Artists and Contributors
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Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_a5f69453d280408db96dd5524d8bb7e0
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_a5f69453d280408db96dd5524d8bb7e0
Other Identifiers
ISSN
2227-7080
E-ISSN
2227-7080
DOI
10.3390/technologies7030060
