High-performance hysteresis-free perovskite transistors through anion engineering
High-performance hysteresis-free perovskite transistors through anion engineering
About this item
Full title
Author / Creator
Zhu, Huihui , Liu, Ao , Shim, Kyu In , Jung, Haksoon , Zou, Taoyu , Reo, Youjin , Kim, Hyunjun , Han, Jeong Woo , Chen, Yimu , Chu, Hye Yong , Lim, Jun Hyung , Kim, Hyung-Jun , Bai, Sai and Noh, Yong-Young
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TF...
Alternative Titles
Full title
High-performance hysteresis-free perovskite transistors through anion engineering
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_ab63e218e8334f269fa0556fee8dedb4
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_ab63e218e8334f269fa0556fee8dedb4
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-022-29434-x
