Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
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Switzerland: MDPI
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Language
English
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Switzerland: MDPI
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Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm2. The thicknesses...
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Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
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TN_cdi_doaj_primary_oai_doaj_org_article_ac975ebaad5849028003acc7399437a4
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_ac975ebaad5849028003acc7399437a4
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ISSN
2072-666X
E-ISSN
2072-666X
DOI
10.3390/mi11030254
