An epitaxial graphene platform for zero-energy edge state nanoelectronics
An epitaxial graphene platform for zero-energy edge state nanoelectronics
About this item
Full title
Author / Creator
Prudkovskiy, Vladimir S. , Hu, Yiran , Zhang, Kaimin , Hu, Yue , Ji, Peixuan , Nunn, Grant , Zhao, Jian , Shi, Chenqian , Tejeda, Antonio , Wander, David , De Cecco, Alessandro , Winkelmann, Clemens B. , Jiang, Yuxuan , Zhao, Tianhao , Wakabayashi, Katsunori , Jiang, Zhigang , Ma, Lei , Berger, Claire , de Heer, Walt A. and Florida State Univ., Tallahassee, FL (United States)
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the subs...
Alternative Titles
Full title
An epitaxial graphene platform for zero-energy edge state nanoelectronics
Authors, Artists and Contributors
Author / Creator
Hu, Yiran
Zhang, Kaimin
Hu, Yue
Ji, Peixuan
Nunn, Grant
Zhao, Jian
Shi, Chenqian
Tejeda, Antonio
Wander, David
De Cecco, Alessandro
Winkelmann, Clemens B.
Jiang, Yuxuan
Zhao, Tianhao
Wakabayashi, Katsunori
Jiang, Zhigang
Ma, Lei
Berger, Claire
de Heer, Walt A.
Florida State Univ., Tallahassee, FL (United States)
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_b07156efa3b64c6195543323065eb152
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_b07156efa3b64c6195543323065eb152
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-022-34369-4
