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Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric mater...

Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric mater...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_b1f94823652341c4b8d740f96d55b1f3

Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

About this item

Full title

Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

Publisher

London: Nature Publishing Group UK

Journal title

Nature communications, 2020-06, Vol.11 (1), p.3142-3142, Article 3142

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for...

Alternative Titles

Full title

Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_b1f94823652341c4b8d740f96d55b1f3

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_b1f94823652341c4b8d740f96d55b1f3

Other Identifiers

ISSN

2041-1723

E-ISSN

2041-1723

DOI

10.1038/s41467-020-16913-2

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