Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers
Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers
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Author / Creator
Wu, Haifeng , Lin, Xiao , Shuai, Qin , Zhu, Youliang , Fu, Yi , Liao, Xiaoqin , Wang, Yazhou , Wang, Yizhe , Cheng, Chaowei , Liu, Yong , Sun, Lei , Luo, Xinyi , Zhu, Xiaoli , Wang, Liancheng , Li, Ziwei , Wang, Xiao , Li, Dong and Pan, Anlian
Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Contents
Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However, Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges suc...
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Full title
Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers
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Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_bba77049bc114531a0e201a26ec2cd53
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_bba77049bc114531a0e201a26ec2cd53
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ISSN
2047-7538,2095-5545
E-ISSN
2047-7538
DOI
10.1038/s41377-024-01639-3
