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Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promis...

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promis...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_bca9482cdbe34de19245540a6e7d35a6

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

About this item

Full title

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Publisher

Basel: MDPI AG

Journal title

Molecules (Basel, Switzerland), 2024-09, Vol.29 (17), p.3988

Language

English

Formats

Publication information

Publisher

Basel: MDPI AG

More information

Scope and Contents

Contents

Field-effect transistors (FETs) based on two-dimensional molybdenum disulfide (2D-MoS2) have great potential in electronic and optoelectronic applications, but the performances of these devices still face challenges such as scattering at the contact interface, which results in reduced mobility. In this work, we fabricated high-performance MoS2-FETs...

Alternative Titles

Full title

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_bca9482cdbe34de19245540a6e7d35a6

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_bca9482cdbe34de19245540a6e7d35a6

Other Identifiers

ISSN

1420-3049

E-ISSN

1420-3049

DOI

10.3390/molecules29173988

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