Study of Flow Pattern Defects and Oxidation Induced Stacking Faults in Czochralski Single-Crystal Si...
Study of Flow Pattern Defects and Oxidation Induced Stacking Faults in Czochralski Single-Crystal Silicon Growth
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Basel: MDPI AG
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English
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Basel: MDPI AG
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This paper emphasizes that the furnace pressure, crucible rotation, and pulling rate have important effects on interstitial oxygen (Oi) concentrations and micro-defects during growth in a Czochralski single-crystal silicon (CZ-Si) growth furnace. Since oxygen in a silicon ingot influences minority carrier lifetime, different set-points of furnace p...
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Study of Flow Pattern Defects and Oxidation Induced Stacking Faults in Czochralski Single-Crystal Silicon Growth
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TN_cdi_doaj_primary_oai_doaj_org_article_c114c025e1964805902cfefb25cda03b
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_c114c025e1964805902cfefb25cda03b
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ISSN
2073-4352
E-ISSN
2073-4352
DOI
10.3390/cryst13020336
