A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Re...
A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses
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Publisher
Weinheim: John Wiley & Sons, Inc
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Language
English
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Publisher
Weinheim: John Wiley & Sons, Inc
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Contents
Herein, physical reservoir computing with a redox‐based ion‐gating reservoir (redox‐IGR) comprising Li
x
WO
3
thin film and lithium‐ion conducting glass ceramic (LICGC) is demonstrated. The subject redox‐IGR successfully solves a second‐order nonlinear dynamic equation by utilizing voltage pulse driven ion‐gating in a Li
x
WO
3...
Alternative Titles
Full title
A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses
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TN_cdi_doaj_primary_oai_doaj_org_article_c24ff5088aff4e49b2b3bc6d093b145a
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_c24ff5088aff4e49b2b3bc6d093b145a
Other Identifiers
ISSN
2640-4567
E-ISSN
2640-4567
DOI
10.1002/aisy.202300123
