Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fab...
Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology
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Author / Creator
Zhang, Yujian , Ding, Guojian , Wang, Fangzhou , Yu, Ping , Feng, Qi , Yu, Cheng , He, Junxian , Wang, Xiaohui , Xu, Wenjun , He, Miao , Wang, Yang , Chen, Wanjun , Jia, Haiqiang and Chen, Hong
Publisher
Basel: MDPI AG
Journal title
Language
English
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Publication information
Publisher
Basel: MDPI AG
Subjects
More information
Scope and Contents
Contents
In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection. The air-bridge source-connection was formed using the Direct Laser Writing Grayscale Photolithography, and it directly connected the two adjacent sources...
Alternative Titles
Full title
Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology
Authors, Artists and Contributors
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Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_c5d5edcc01f647b196d94d445a43f930
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_c5d5edcc01f647b196d94d445a43f930
Other Identifiers
ISSN
2073-4352
E-ISSN
2073-4352
DOI
10.3390/cryst13050815
