Semiconductor–metal transition in Bi2Se3 caused by impurity doping
Semiconductor–metal transition in Bi2Se3 caused by impurity doping
About this item
Full title
Author / Creator
Uchiyama, Takaki , Goto, Hidenori , Uesugi, Eri , Takai, Akihisa , Zhi, Lei , Miura, Akari , Hamao, Shino , Eguchi, Ritsuko , Ota, Hiromi , Sugimoto, Kunihisa , Fujiwara, Akihiko , Matsui, Fumihiko , Kimura, Koji , Hayashi, Kouichi , Ueno, Teppei , Kobayashi, Kaya , Akimitsu, Jun and Kubozono, Yoshihiro
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
Doping a typical topological insulator, Bi
2
Se
3
, with Ag impurity causes a semiconductor–metal (S-M) transition at 35 K. To deepen the understanding of this phenomenon, structural and transport properties of Ag-doped Bi
2
Se
3
were studied. Single-crystal X-ray diffraction (SC-XRD) showed no structural transitions but sli...
Alternative Titles
Full title
Semiconductor–metal transition in Bi2Se3 caused by impurity doping
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_cb1292a26c924206a4f124cb90599adb
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_cb1292a26c924206a4f124cb90599adb
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-023-27701-5
