High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels fo...
High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
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Author / Creator
Li, Qingxuan , Wang, Siwei , Li, Zhenhai , Hu, Xuemeng , Liu, Yongkai , Yu, Jiajie , Yang, Yafen , Wang, Tianyu , Meng, Jialin , Sun, Qingqing , Zhang, David Wei and Chen, Lin
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publication information
Publisher
London: Nature Publishing Group UK
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Contents
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible...
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Full title
High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
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Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_d2a00105e28d4eb0878efc0ea00eb151
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_d2a00105e28d4eb0878efc0ea00eb151
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-024-46878-5
