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Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synt...

Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synt...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_d5a482dfd41e499bb61af5f3391f179c

Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

About this item

Full title

Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

Publisher

London: Nature Publishing Group UK

Journal title

Nature communications, 2016-06, Vol.7 (1), p.11962-11962, Article 11962

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitr...

Alternative Titles

Full title

Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_d5a482dfd41e499bb61af5f3391f179c

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_d5a482dfd41e499bb61af5f3391f179c

Other Identifiers

ISSN

2041-1723

E-ISSN

2041-1723

DOI

10.1038/ncomms11962

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