Crystal orientation of epitaxial film deposited on silicon surface
Crystal orientation of epitaxial film deposited on silicon surface
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Publisher
London: Nature Publishing Group UK
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Language
English
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London: Nature Publishing Group UK
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Contents
Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Thermodynamic stability of binary oxides is comprehensively investigated on Si substrates and shows possibility of chemical reaction of oxide materials on Si surface. However, the thermodynamic stability...
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Full title
Crystal orientation of epitaxial film deposited on silicon surface
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TN_cdi_doaj_primary_oai_doaj_org_article_d5bb869b82c549d4b6525780f9d63bfa
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_d5bb869b82c549d4b6525780f9d63bfa
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-024-61564-8
