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Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon F...

Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon F...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_df3428d131fd4b6bbec6e46233f1e725

Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays

About this item

Full title

Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays

Publisher

Basel: MDPI AG

Journal title

Micromachines (Basel), 2023-11, Vol.14 (11), p.2008

Language

English

Formats

Publication information

Publisher

Basel: MDPI AG

More information

Scope and Contents

Contents

Field emitter arrays (FEAs) are a promising component for novel vacuum micro- and nanoelectronic devices, such as microwave power amplifiers or fast-switching X-ray sources. However, the interrelated mechanisms responsible for FEA degradation and failure are not fully understood. Therefore, we present a measurement method for quantitative observati...

Alternative Titles

Full title

Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_df3428d131fd4b6bbec6e46233f1e725

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_df3428d131fd4b6bbec6e46233f1e725

Other Identifiers

ISSN

2072-666X

E-ISSN

2072-666X

DOI

10.3390/mi14112008

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