A FinFET with one atomic layer channel
A FinFET with one atomic layer channel
About this item
Full title
Author / Creator
Chen, Mao-Lin , Sun, Xingdan , Liu, Hang , Wang, Hanwen , Zhu, Qianbing , Wang, Shasha , Du, Haifeng , Dong, Baojuan , Zhang, Jing , Sun, Yun , Qiu, Song , Alava, Thomas , Liu, Song , Sun, Dong-Ming and Han, Zheng
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (
W
fin...
Alternative Titles
Full title
A FinFET with one atomic layer channel
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_dfdb6dafbb0746b1aad4e7e31b106cba
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_dfdb6dafbb0746b1aad4e7e31b106cba
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-020-15096-0
