LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K
LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K
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Publisher
Switzerland: MDPI AG
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Language
English
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Publisher
Switzerland: MDPI AG
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Contents
We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors' knowledge. It is a modified PIN HgCdTe photodiode, forming the tetra-lateral PSD, with a photosensitive are...
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Full title
LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K
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TN_cdi_doaj_primary_oai_doaj_org_article_e8c12dddb66242e4b3c57d7f2a1e8653
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_e8c12dddb66242e4b3c57d7f2a1e8653
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ISSN
1424-8220
E-ISSN
1424-8220
DOI
10.3390/s23104915
