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The Planar Core–Shell Junctionless MOSFET

The Planar Core–Shell Junctionless MOSFET

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_eacd714de0d240eeba9166169fce4f92

The Planar Core–Shell Junctionless MOSFET

About this item

Full title

The Planar Core–Shell Junctionless MOSFET

Publisher

Switzerland: MDPI AG

Journal title

Micromachines (Basel), 2025-03, Vol.16 (4), p.418

Language

English

Formats

Publication information

Publisher

Switzerland: MDPI AG

More information

Scope and Contents

Contents

The core–shell junctionless MOSFET (CS-JL FET) meets the process requirements of FD-SOI technology. The transistor body comprises a heavily doped ultrathin layer (core linking the source and the drain), located underneath an undoped layer (shell). Drain current, transconductance, and capacitance characteristics demonstrate striking performance impr...

Alternative Titles

Full title

The Planar Core–Shell Junctionless MOSFET

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_eacd714de0d240eeba9166169fce4f92

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_eacd714de0d240eeba9166169fce4f92

Other Identifiers

ISSN

2072-666X

E-ISSN

2072-666X

DOI

10.3390/mi16040418

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