Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electr...
Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon
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Basel: MDPI AG
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English
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Basel: MDPI AG
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Achieving high quantum efficiency in long-wavelength LEDs has posed a significant challenge to the solid-state lighting and display industries. In this article, we use V-defect engineering as a technique to achieve higher efficiencies in red InGaN LEDs on (111) Si through lateral injection. We investigate the effects of superlattice structure on th...
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Full title
Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon
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TN_cdi_doaj_primary_oai_doaj_org_article_eb73ad91fa2343e8863bd765b2988c89
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_eb73ad91fa2343e8863bd765b2988c89
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ISSN
2073-4352
E-ISSN
2073-4352
DOI
10.3390/cryst12091216
