Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2
Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2
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London: Nature Publishing Group UK
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English
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London: Nature Publishing Group UK
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The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. However, defects within the high-κ stack or at the interfaces can significantly degrade the performance of these “interface-only” devices,...
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Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2
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TN_cdi_doaj_primary_oai_doaj_org_article_f1efbe62396a45a18ee87b5db649bd68
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_f1efbe62396a45a18ee87b5db649bd68
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ISSN
2397-7132
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2397-7132
DOI
10.1038/s41699-025-00527-7
