Optimization of urea-EnFET based on Ta2O5 layer with post annealing
Optimization of urea-EnFET based on Ta2O5 layer with post annealing
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Switzerland: MDPI AG
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Language
English
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Publisher
Switzerland: MDPI AG
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In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta(2)O(5)) sensing membranes. In addition, a post N(2) annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced dri...
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Full title
Optimization of urea-EnFET based on Ta2O5 layer with post annealing
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TN_cdi_doaj_primary_oai_doaj_org_article_f23f74215873495eb3591c0967c8d8ce
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_f23f74215873495eb3591c0967c8d8ce
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ISSN
1424-8220
E-ISSN
1424-8220
DOI
10.3390/s110504562
