Terahertz Single-Pixel Imaging Improved by Using Silicon Wafer with SiO2 Passivation
Terahertz Single-Pixel Imaging Improved by Using Silicon Wafer with SiO2 Passivation
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Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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We demonstrate terahertz single-pixel imaging is improved by using a photomodulator based on silicon passivated with SiO 2 . By exploring various SiO 2 thicknesses, we show that the modulation factor of the as-fabricated terahertz photomodulator can reach 0.9, three times that based on bare silicon. This improvement originates from chemical passiva...
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Full title
Terahertz Single-Pixel Imaging Improved by Using Silicon Wafer with SiO2 Passivation
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TN_cdi_doaj_primary_oai_doaj_org_article_f2c68f549e544059be892720afb95129
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_f2c68f549e544059be892720afb95129
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ISSN
2076-3417
E-ISSN
2076-3417
DOI
10.3390/app10072427
