Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories
Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories
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Basel: MDPI AG
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English
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Basel: MDPI AG
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In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device contain...
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Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories
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TN_cdi_doaj_primary_oai_doaj_org_article_f4a8ce9ee5ea45509a58d0e0809e2ab1
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_f4a8ce9ee5ea45509a58d0e0809e2ab1
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ISSN
2073-4352
E-ISSN
2073-4352
DOI
10.3390/cryst9060318
