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Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_f5319dbadc794829abff0ea629f95379

Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

About this item

Full title

Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

Publisher

Switzerland: MDPI AG

Journal title

Nanomaterials (Basel, Switzerland), 2024-03, Vol.14 (6), p.493

Language

English

Formats

Publication information

Publisher

Switzerland: MDPI AG

More information

Scope and Contents

Contents

In this study, we examine the electrical characteristics of triple-gate feedback field-effect transistors (TG FBFETs) over a temperature range of −200 °C to 280 °C. With increasing temperature from 25 °C to 280 °C, the thermally generated charge carriers increase in the channel regions such that a positive feedback loop forms rapidly. Thus, the lat...

Alternative Titles

Full title

Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_f5319dbadc794829abff0ea629f95379

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_f5319dbadc794829abff0ea629f95379

Other Identifiers

ISSN

2079-4991

E-ISSN

2079-4991

DOI

10.3390/nano14060493

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