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Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_f64db16d864945078b3035d039906df9

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

About this item

Full title

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Publisher

Bristol: IOP Publishing

Journal title

New journal of physics, 2020-12, Vol.22 (12), p.123036

Language

English

Formats

Publication information

Publisher

Bristol: IOP Publishing

More information

Scope and Contents

Contents

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V...

Alternative Titles

Full title

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_f64db16d864945078b3035d039906df9

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_f64db16d864945078b3035d039906df9

Other Identifiers

ISSN

1367-2630

E-ISSN

1367-2630

DOI

10.1088/1367-2630/abc466

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