Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features
Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features
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Publisher
Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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Contents
The diversity of brain functions depend on the release of neurotransmitters in chemical synapses. The back gated three terminal field effect transistors (FETs) are auspicious candidates for the emulation of biological functions to recognize the proficient neuromorphic computing systems. In order to encourage the hysteresis loops, we treated the bot...
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Full title
Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features
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TN_cdi_doaj_primary_oai_doaj_org_article_fba23d08da1c4f3484b3512ff5cd7ca8
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_fba23d08da1c4f3484b3512ff5cd7ca8
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ISSN
2079-4991
E-ISSN
2079-4991
DOI
10.3390/nano10122326
