Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS
Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS
About this item
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Author / Creator
Liu, Zhengtao , Hong, Tao , Xu, Liqing , Wang, Sining , Gao, Xiang , Chang, Cheng , Ding, Xiangdong , Xiao, Yu and Zhao, Li‐Dong
Publisher
Wuhan: John Wiley & Sons, Inc
Journal title
Language
English
Formats
Publication information
Publisher
Wuhan: John Wiley & Sons, Inc
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Scope and Contents
Contents
Lead sulfide (PbS) presents large potential in thermoelectric application due to its earth‐abundant S element. However, its inferior average ZT (ZTave) value makes PbS less competitive with its analogs PbTe and PbSe. To promote its thermoelectric performance, this study implements strategies of continuous Se alloying and Cu interstitial doping to s...
Alternative Titles
Full title
Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS
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Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_fcddd1477331495eb4c319975b45b202
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_fcddd1477331495eb4c319975b45b202
Other Identifiers
ISSN
2767-441X,2767-4401
E-ISSN
2767-441X
DOI
10.1002/idm2.12056
