Design methodology for narrow-band lownoise amplifier using cmos 0.18 μmtechnology
Design methodology for narrow-band lownoise amplifier using cmos 0.18 μmtechnology
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Amman, Jordan: Princess Sumaya University for Technology
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Amman, Jordan: Princess Sumaya University for Technology
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This paper presents a design methodology for a fully integrated narrow-band low noise amplifier (LNA). To demonstrate the effectiveness of the proposed methodology, an LNA for Wi-Fi and Bluetooth standards at 2.4 GHz is conducted. the design circuity is implemented using 0.18 μm TSMC CMOS technology; however, the methodology can be equally applied...
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Design methodology for narrow-band lownoise amplifier using cmos 0.18 μmtechnology
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TN_cdi_emarefa_primary_1416099
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_emarefa_primary_1416099
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2413-9351
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2415-1076
