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Patent Issued for Method for measuring extremely low oxygen concentration in silicon wafer

Patent Issued for Method for measuring extremely low oxygen concentration in silicon wafer

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_gale_infotracacademiconefile_A767313615

Patent Issued for Method for measuring extremely low oxygen concentration in silicon wafer

About this item

Full title

Patent Issued for Method for measuring extremely low oxygen concentration in silicon wafer

Publisher

NewsRX LLC

Journal title

Journal of Engineering, 2023, p.6369

Language

English

Publication information

Publisher

NewsRX LLC

More information

Alternative Titles

Full title

Patent Issued for Method for measuring extremely low oxygen concentration in silicon wafer

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_gale_infotracacademiconefile_A767313615

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_gale_infotracacademiconefile_A767313615

Other Identifiers

ISSN

1945-8711

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