Enhancing the Resistive Switching Properties of Transparent HfO[sub.2]-Based Memristor Devices for R...
Enhancing the Resistive Switching Properties of Transparent HfO[sub.2]-Based Memristor Devices for Reliable Gasistor Applications
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Publisher
MDPI AG
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Language
English
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MDPI AG
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Contents
We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high...
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Full title
Enhancing the Resistive Switching Properties of Transparent HfO[sub.2]-Based Memristor Devices for Reliable Gasistor Applications
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TN_cdi_gale_infotracacademiconefile_A813764227
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_gale_infotracacademiconefile_A813764227
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ISSN
1424-8220
E-ISSN
1424-8220
DOI
10.3390/s24196382
