X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate
X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate
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Author / Creator
Sarazin, N. , Jardel, O. , Morvan, E. , Aubry, R. , Laurent, M. , Magis, M. , Tordjman, M. , Alloui, M. , Drisse, O. , Di Persio, J. , di Forte Poisson, M.A. , Delage, S.L. , Vellas, N. , Gaquière, C. and Théron, D.
Publisher
IET
Journal title
Language
English
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Publisher
IET
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Scope and Contents
Contents
AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8W/mm at 10GHz with a gate length of 0.25mum. A good extrinsic transconductance value of 400mS/mm was also measur...
Alternative Titles
Full title
X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate
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Primary Identifiers
Record Identifier
TN_cdi_hal_primary_oai_HAL_hal_00283494v1
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_hal_primary_oai_HAL_hal_00283494v1
Other Identifiers
ISSN
0013-5194
E-ISSN
1350-911X
DOI
10.1049/el:20072598
