MoS₂ transistors with 1-nanometer gate lengths
MoS₂ transistors with 1-nanometer gate lengths
About this item
Full title
Author / Creator
Publisher
United States: American Association for the Advancement of Science
Journal title
Language
English
Formats
Publication information
Publisher
United States: American Association for the Advancement of Science
Subjects
More information
Scope and Contents
Contents
Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Her...
Alternative Titles
Full title
MoS₂ transistors with 1-nanometer gate lengths
Authors, Artists and Contributors
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Primary Identifiers
Record Identifier
TN_cdi_osti_scitechconnect_1347831
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_1347831
Other Identifiers
ISSN
0036-8075
E-ISSN
1095-9203
DOI
10.1126/science.aah4698
