Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
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Publisher
United States: American Association for the Advancement of Science
Journal title
Language
English
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Publisher
United States: American Association for the Advancement of Science
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Contents
Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS₂, often exhibit low PL QY for as-processed samples, which has typic...
Alternative Titles
Full title
Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
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Record Identifier
TN_cdi_osti_scitechconnect_1564027
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_1564027
Other Identifiers
ISSN
0036-8075
E-ISSN
1095-9203
DOI
10.1126/science.aaw8053
