Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Contents
HfO
2
, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon technology. This material has a polymorphic nature, with the polar orthorhombic (
Pbc
2
1
) form in ultrathin films regarded as the plausible cause of ferroelectricity but thought not to be attainable in bulk crystals. Here, using a sta...
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Full title
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
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TN_cdi_osti_scitechconnect_1798576
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_1798576
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ISSN
1476-1122
E-ISSN
1476-4660
DOI
10.1038/s41563-020-00897-x
