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Intrinsic ferroelectricity in Y-doped HfO2 thin films

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Intrinsic ferroelectricity in Y-doped HfO2 thin films

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_1877162

Intrinsic ferroelectricity in Y-doped HfO2 thin films

About this item

Full title

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Author / Creator

Yun, Yu , Buragohain, Pratyush , Li, Ming , Ahmadi, Zahra , Zhang, Yizhi , Li, Xin , Wang, Haohan , Li, Jing , Lu, Ping , Tao, Lingling , Wang, Haiyan , Shield, Jeffrey E. , Tsymbal, Evgeny Y. , Gruverman, Alexei , Xu, Xiaoshan and Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publisher

London: Nature Publishing Group UK

Journal title

Nature materials, 2022-08, Vol.21 (8), p.903-909

Language

English

Formats

Articles

Publication information

Publisher

London: Nature Publishing Group UK

Subjects

More information

Scope and Contents

Contents

Ferroelectric HfO
2
-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high de...

Alternative Titles

Full title

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Authors, Artists and Contributors

Author / Creator

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Primary Identifiers

Record Identifier

TN_cdi_osti_scitechconnect_1877162

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_1877162

Other Identifiers

ISSN

1476-1122

E-ISSN

1476-4660

DOI

10.1038/s41563-022-01282-6

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