On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well La...
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
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Publisher
Moscow: Pleiades Publishing
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Language
English
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Publisher
Moscow: Pleiades Publishing
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Contents
Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compen...
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Full title
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
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Record Identifier
TN_cdi_osti_scitechconnect_22749709
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22749709
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ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782618120060
