Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si...
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
About this item
Full title
Author / Creator
Publisher
Moscow: Pleiades Publishing
Journal title
Language
English
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Publication information
Publisher
Moscow: Pleiades Publishing
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Scope and Contents
Contents
InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.
Alternative Titles
Full title
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
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Primary Identifiers
Record Identifier
TN_cdi_osti_scitechconnect_22756252
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22756252
Other Identifiers
ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782617110057
