Features of the selective manganese doping of GaAs structures
Features of the selective manganese doping of GaAs structures
About this item
Full title
Author / Creator
Publisher
Moscow: Pleiades Publishing
Journal title
Language
English
Formats
Publication information
Publisher
Moscow: Pleiades Publishing
Subjects
More information
Scope and Contents
Contents
The effect of technological parameters on the selective manganese doping of arsenide–gallium heterostructures fabricated by a combination of methods of MOS-hydride epitaxy and pulsed-laser deposition is investigated. As these parameters, the impurity content in the manganese δ layer and the structureformation temperature are used. It is established...
Alternative Titles
Full title
Features of the selective manganese doping of GaAs structures
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_osti_scitechconnect_22756262
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22756262
Other Identifiers
ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782617110148
