Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
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Publisher
Moscow: Pleiades Publishing
Journal title
Language
English
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Publisher
Moscow: Pleiades Publishing
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Scope and Contents
Contents
The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of t...
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Full title
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
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Record Identifier
TN_cdi_osti_scitechconnect_22756265
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22756265
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ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782617110136
